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INTEGRATED CIRCUITS
DATA SHEET
TDA8580 Multi-purpose power amplifier
Preliminary specification Supersedes data of 1996 Jan 4 File under Integrated Circuits, IC01 1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
FEATURES General * Operating voltage from 8 to 28 V * Low distortion * Few external components, fixed gain * High output power * Can be used as a stereo amplifier in bridge-tied load (BTL) or quad single-ended (SE) amplifiers * Single-ended mode without loudspeaker capacitor * Mute and standby mode with one- or two-pin operation * Diagnostic information for Dynamic Distortion Detector (DDD), high temperature (145 C) and short-circuit * No switch on/off plops when switching between `standby' to `mute' and from `mute' to `on' * Low offset variation at outputs between `mute' and `on' * Fast mute on supply voltage drops. Protection * Reverse polarity safe * Short-circuit proof to ground, positive supply voltage on all pins and across load * ESD protected on all pins * Thermal protection against temperatures exceeding 150 C * Load dump protection * Protected against open-circuit ground pins and output short-circuited to supply ground. ORDERING INFORMATION TYPE NUMBER TDA8580 PACKAGE NAME DBS17P DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) GENERAL DESCRIPTION
TDA8580
The TDA8580 is a stereo bridge-tied load (BTL) or a quad single-ended amplifier that operates over a wide supply voltage range from 8 to 28 V. This makes it suitable for many applications, such as car radios, television and home-sound systems. Because of an internal voltage buffer, this device can be used without a capacitor connected in series with the load (SE application). A combined BTL and 2 x SE application can also be configured.
VERSION SOT243-1
1998 Feb 25
2
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
QUICK REFERENCE DATA SYMBOL VP Iq(tot) Istb Gv PARAMETER operating supply voltage total quiescent current standby supply current voltage gain VP = 14.4 V VP = 14.4 V single-ended bridge-tied load Bridge-tied load application Po output power THD = 0.5%; VP = 14.4 V; RL = 4 THD = 0.5%; VP = 24 V; RL = 8 THD total harmonic distortion fi = 1 kHz; Po = 1 W; VP = 14.4 V; RL = 4 fi = 1 kHz; Po = 10 W; VP = 24 V; RL = 8 Voffset(DC) DC output offset voltage VP = 14.4 V; `mute' condition; RL = 4 VP = 14.4 V; `on' condition Vno SVRR noise output voltage supply voltage ripple rejection Rs = 1 k; VP = 14.4 V fi = 1 kHz; Vripple(p-p) = 2 V; `on' or `mute' condition; Rs = 0 THD = 0.5%; VP = 14.4 V; RL = 4 THD = 0.5%; VP = 24 V; RL = 4 Voffset(DC) DC output offset voltage VP = 14.4 V; `mute' condition; RL = 4 VP = 14.4 V; `on' condition Vno SVRR noise output voltage supply voltage ripple rejection Rs = 1 k; VP = 14.4 V fi = 1 kHz; Vripple(p-p) = 2 V; `on' or `mute' condition; Rs = 0 - - - - - - - 55 16 28 0.05 0.05 10 0 100 - - - - - 20 CONDITIONS - - 25 31 MIN. 8.0 - 120 1 26 32 TYP.
TDA8580
MAX. 28 140 50 27 33 V
UNIT mA A dB dB
W W % % mV mV V dB
100 150 -
Single-ended application Po output power - - - - - 45 4.2 13 10 0 80 - - - 20 100 120 - W W mV mV V dB
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
BLOCK DIAGRAM
TDA8580
VP1
handbook, full pagewidth
VP2 15 45 k
3 IN1 7 60 k
- +
V/I
- + +
OA
1
TDA8580
IN2 8 60 k Vpx
OUT1+
+ -
V/I Vpx 45 k
-
OA
4
OUT2-
45 k
30 k BUFFER
9 45 k BUFFER
BUFFER
60 k IN3 10
- +
V/I
45 k
- + +
OA
14
OUT3-
IN5
12 60 k
+ -
V/I
-
OA
17
OUT4+
IN4
11 13 5 INTERFACE
45 k
MUTE STANDBY
DIAGNOSTIC
6
DIAG
2 PGND1
16
MGE010
PGND2
Fig.1 Block diagram.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
PINNING SYMBOL OUT1+ PGND1 VP1 OUT2- STANDBY DIAG IN1 IN2 BUFFER IN3 IN4 IN5 MUTE OUT3- VP2 PGND2 OUT4+ PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION non-inverting output 1 power ground 1 supply voltage 1 inverting output 2 `standby'/`mute'/`on' selection diagnostic output input 1 input 2 buffer output (single-ended output buffer) input 3 input 4 input 5; signal ground capacitor `mute'/`on' selection inverting output 3 supply voltage 2 power ground 2 non-inverting output 4
VP2 PGND2 OUT4+ 15 16 17
MGE009
TDA8580
handbook, halfpage
OUT1+ PGND1 VP1 OUT2- STANDBY DIAG IN1 IN2 BUFFER IN3 IN4 IN5 MUTE OUT3-
1 2 3 4 5 6 7 8 9 10 11 12 13 14
TDA8580
Fig.2 Pin configuration.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
FUNCTIONAL DESCRIPTION The TDA8580 is a multi-purpose power amplifier with four amplifiers which can be connected in the following configurations with high output power and low distortion (at minimum quiescent current); * Dual bridge-tied load (BTL) amplifiers * Quad single-ended amplifiers * Dual single-ended amplifiers and one bridge-tied load amplifier. The amplifier can be switched on (play or `mute') and off (`standby') by the MUTE and STANDBY pins (for interfacing directly with a microcontroller). One-pin operation is also possible by applying a voltage greater than 8 V to the `standby'/'mute'/'on' selection pin (pin 5) to switch the amplifier in `on' mode. Special attention is given to the dynamic behaviour as follows: * Noise suppression during engine start. * No plops when switching from `standby' to `on'. * Slow offset change between `mute' and `on' (controlled by MUTE and STANDBY pins). * Low noise levels, which are independent of the supply voltage.
TDA8580
Protections are included to avoid the IC being damaged at: * Over temperature: T > 150 C. * Short-circuit of the output pin(s) to ground or supply rail. When short-circuited, the power dissipation is limited. * A missing-current limiter which limits the maximum short circuit output current to PGND or VP pins to 1 A. The dissipation and speaker current will be minimized because the short-circuited amplifier is switched off. The chip temperature is limited by the temperature protection. * ESD protection (Human Body Model 3000 V, Machine Model 300 V). * Energy handling. A DC voltage of 6 V can be connected to the output of any amplifier while the supply pins are short-circuited to ground. No high DC current will flow from the supply pins of the amplifier. Diagnostics are available for the following conditions (see Figs 4 to 7). * Amplifier in `mute' * Chip temperature greater than 145 C * Distortion over 2% due to clipping * Short-circuit protection active.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER supply voltage CONDITIONS operating load dump protected; see Fig.3 VDIAG IOSM IORM Vrev Vsc voltage on diagnostic pin non-repetitive peak output current repetitive peak output current reverse polarity voltage AC and DC short-circuit voltage of output pins across loads and to ground or supply pins total power dissipation junction temperature storage temperature operating ambient temperature no external series resistor in supply line; note 1 8 - - - - - - MIN. MAX. 28 45 18 6 4.5 6 24 V V V A A V V UNIT
Ptot Tj Tstg Tamb Note
- - -55 -40
75 150 +150 +150
W C C C
1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of tbf . 1998 Feb 25 6
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 40 1.5
TDA8580
UNIT K/W K/W
CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; fi = 1 kHz; RL = ; measured in test circuit of Fig.8; unless otherwise specified. SYMBOL Supply VP Iq(tot) Istb VO VP(mute) Vo VI V5(stb) Vhys(5)(stb) operating supply voltage total quiescent current standby current DC output voltage low supply voltage mute single-ended and bridge-tied load output voltage DC input voltage VP = 14.4 V; `mute' condition; RL = 4 VP = 14.4 V VP = 14.4 V 8.0 - - - 6.0 - - 0 note 1 - 14.4 120 1 7.0 7.0 - 4.0 - 0.2 28 140 50 - 8.0 20 - 0.8 - V mA A V V mV V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
STANDBY PIN (see Table 1) voltage at STANDBY pin for `standby' condition hysteresis voltage at STANDBY pin for `standby' condition voltage at STANDBY pin for `mute' condition voltage at STANDBY pin for `on' condition V V
V5(mute) V5(on)
V13 < 1 V V13 < 1 V; VP > 9 V; note 2
2.0 8.0
- -
5.5 18
V V
MUTE PIN (see Table 1) V13(mute) V13(on) voltage at MUTE pin for `mute' condition voltage at MUTE pin for `on' condition V5 = 5 V V5 = 5 V 0 3.5 - - 1.0 5.5 V V
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7 VOL ILI CD Tj(diag) low level output voltage leakage current clip detector junction temperature for high temperature warning Isink = 1 mA VDIAG = 14.4 V VDIAG < 0.8 V VDIAG < 0.8 V - - tbf - 0.2 - 2 145 0.8 1 tbf - V A % C
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
SYMBOL
PARAMETER
CONDITIONS fi = 1 kHz; Po = 1 W; RL = 4 fi = 10 kHz; Po = 1 W; RL = 4 ; Filter: 22 Hz < f < 30 kHz fi = 1 kHz; Po = 1 W; VP = 14.4 V; RL = 4 fi = 1 kHz; Po = 10 W; VP = 24 V; RL = 8 - -
MIN.
TYP.
MAX.
UNIT
Stereo BTL application (see Fig.8) THD total harmonic distortion 0.05 0.2 0.1 - % %
- - 15 25 18 - 31 40 - - - - - - 55
0.05 0.05 16 28 20 35 32 55 - 0 10 100 0 3 -
- - - - - - 33 - 1 100 20 150 20 500 -
% % W W W W dB dB dB mV mV V V V dB
Po
output power
THD = 0.5%; VP = 14.4 V; RL = 4 THD = 0.5%; VP = 24 V; RL = 8 THD = 10%; VP = 14.4 V; RL = 4 THD = 10%; VP = 24 V; RL = 8
Gv cs Gv Voffset(DC)
voltage gain channel separation channel unbalance DC output offset voltage
Vo(rms) = 3 V Po = 2 W; fi = 1 kHz; RL = 4 VP = 14.4 V; `on' condition VP = 14.4 V; `mute' condition; RL = 4
Vno Vno(mute) Vo(mute) SVRR
noise output voltage noise output voltage mute output voltage mute supply voltage ripple rejection
Rs = 1 k; VP = 14.4 V; note 3 note 3 Vi(rms) = 1 V Rs = 0 ; fi = 1 kHz; Vripple(p-p) = 2 V; `on' or `mute' condition Rs = 0 ; Vi(rms) = 0.5 V; fi = 1 kHz fi = 1 kHz; Po = 1 W; RL = 4 fi = 10 kHz; Po = 1 W; RL = 4 ; Filter: 22 Hz < f < 30 kHz
Zi CMRR
input impedance common mode rejection ratio
23 -
30 60
37 -
k dB
Quad SE application (see Fig.9) THD total harmonic distortion - - 0.05 0.2 0.1 - % %
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
SYMBOL Po
PARAMETER output power
CONDITIONS THD = 0.5%; VP = 14.4 V; RL = 4 THD = 0.5%; VP = 24 V; RL = 4 THD = 10%; VP = 14.4 V; RL = 4 THD = 10%; VP = 24 V; RL = 4 4
MIN.
TYP. 4.2 13 5.5 16 26 46 - 0 10 80 0 3 - 60 60 - - - -
MAX.
UNIT W W W W dB dB dB mV mV V V V dB k dB
11.5 - 14 25 40 - - - - - - 45 46
Gv cs Gv Voffset(DC)
voltage gain channel separation channel unbalance DC output offset voltage
Vo(rms) = 3 V Po = 2 W; fi = 1 kHz; RL = 4 VP = 14.4 V; `on' condition VP = 14.4 V; `mute' condition; RL = 4
27 - 1 100 20 120 20 500 - 74 -
Vno Vno(mute) Vo(mute) SVRR Zi CMRR
noise output voltage noise output voltage mute output voltage mute supply voltage ripple rejection input impedance common mode rejection ratio
Rs = 1 k; VP = 14.4 V; note 3 note 3 Vi(rms) = 1 V fi = 1 kHz; Vripple(p-p) = 2 V, `on' or `mute' condition; Rs = 0 Vi(rms) = 0.5 V; fi = 1 kHz; Rs = 0
-
Notes to the characteristics 1. Hysteresis between rise and fall voltage when MSB pin is controlled with real voltage source (the hysteresis depends on resistor connected to MSB pin). 2. At lower VP the voltage at the STANDBY pin for `on' condition will be adjusted automatically to maintain an `on' condition at low battery voltage (down to 8 V) when using one-pin operation. 3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz. Table 1 Selection of `standby', `mute' and `on'. VOLTAGE AT PIN 5 V5 < 0.8 V 2 V < V5 < 5.3 V 2 V < V5 < 5.3 V V5 8.0 V VOLTAGE AT PIN 13 don't care V13 < 1 V 3.5 V < V13 < 5.3 V don't care FUNCTION `standby' (off) `mute' (DC settled) `on' (AC operating) `on' (AC operating)
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
handbook, halfpage handbook, halfpage
MGL404
play normal amplifier in mute on
DIAG 45 V STANDBY VP 14.4 V amplifier output mute
tr
tf
t (ms)
MGE019
Fig.3 Load dump voltage waveform.
Fig.4 Diagnostic waveform: normal play.
handbook, halfpage
short-circuit overload
handbook, halfpage
DIAG DIAG
normal
play DDD
normal
amplifier output
amplifier output
MGE020
MGE021
Fig.5 Diagnostic waveform: short-circuit overload.
Fig.6 Diagnostic waveform: DDD play.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
handbook, halfpage
short-circuit to VP PGND DIAG
amplifier output
MGE022
Fig.7 Diagnostic waveform: short-circuit to GND and VP.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
APPLICATION INFORMATION
TDA8580
handbook, full pagewidth
1000 F 16/40 V VP1 3 VP2 15 45 k
VP 100 nF
220 nF
IN1 7 60 k
- +
V/I
VinL
- + +
OA
1 OUT1+
TDA8580
IN2 8 60 k Vpx
+
4 OUT2-
-
4 or 8
+ -
V/I Vpx 45 k
-
OA
45 k
30 k BUFFER 100 F 10 V
9 BUFFER 45 k BUFFER
IN5 12 60 k IN3 10
- +
V/I
45 k
- + +
OA
14 OUT3-
+ -
OA 17 OUT4+
4 or 8
220 nF
60 k IN4 11 MUTE 13
+ -
V/I
-
45 k 10 k
+5 V 6 DIAG
VinR
STANDBY
5
INTERFACE
DIAGNOSTIC
2 PGND1
16 PGND2
MGE011
Fig.8 Stereo bridge-tied load application.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
handbook, full pagewidth
1000 F 16/40 V VP1 3 220 nF IN1 7 VinR 60 k VP2 15 45 k
VP 100 nF
- +
V/I
- + +
OA
1
OUT1+
TDA8580
FRONT
VinL Vpx 220 nF IN2 8 60 k
+
4 OUT2-
4 or 8
-
+ -
V/I Vpx 45 k
-
OA
45 k
- +
9 BUFFER
4 or 8
30 k BUFFER 100 F 10 V 220 nF VinR 60 k IN4 11
45 k
BUFFER
+
45 k
IN5 12 60 k IN3 10
- +
V/I
-
14 OUT3-
4 or 8
- + +
OA
-
OA 17 OUT4+
+ -
V/I
+
4 or 8
REAR
VinL
-
220 nF
45 k +5 V 10 k
MUTE 13 STANDBY 5 INTERFACE DIAGNOSTIC 6 DIAG
2 PGND1
16 PGND2
MGE013
Fig.9 Quad single-ended application.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
handbook, full pagewidth
1000 F 16/40 V VP1 3 VP2 15 45 k
VP 100 nF
220 nF VinR
IN1 7 60 k
- +
V/I
- + +
OA
1
OUT1+
TDA8580
IN2 8 60 k Vpx
+
4 OUT2-
4 or 8
-
+ -
V/I Vpx 45 k
-
OA
45 k
30 k BUFFER 100 F 10 V 220 nF VinR 60 k IN4 11 MUTE 13 STANDBY 5 INTERFACE
9 45 k BUFFER
BUFFER
+
45 k
IN5 12 60 k IN3 10
- +
V/I
-
14 OUT3-
4 or 8
- + +
OA
-
OA 17 OUT4+
+ -
V/I
+
4 or 8
-
220 nF VinL
45 k +5 V 6 DIAG 10 k
DIAGNOSTIC
2 PGND1
16 PGND2
MGE012
Fig.10 Dual single-ended and one bridge-tied load application.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
INTERNAL PIN CONFIGURATION PIN 7, 8, 10, 11 and 12 NAME inputs
handbook, halfpage
TDA8580
EQUIVALENT CIRCUIT
VP
IN
MGE014
1, 4, 14 and 17
outputs
handbook, halfpage
VP
OUT
0.5 VP
MGE015
5 and 13
mode select
handbook, halfpage
VP
MGE016
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
TDA8580
SOT243-1
non-concave D x Dh
Eh
view B: mounting base side
d
A2
B j E A
L3
L
Q c vM
1 Z e e1 bp wM
17 m e2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45
1.27 5.08
ISSUE DATE 95-03-11 97-12-16
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA8580
with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
NOTES
TDA8580
1998 Feb 25
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Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
NOTES
TDA8580
1998 Feb 25
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Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/02/pp20
Date of release: 1998 Feb 25
Document order number:
9397 750 02237

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